Devices That Can be Tested and Characterized by the FTI 1000 & 2000
Discrete Devices
Power Management ICs / Linear ICs / Smart Power Multi-Chip Modules
Tests That Can Be Performed by the FTI 1000
Gallium Nitride (GaN) High Power FET and HEMT Testing
Focused Test Inc. offers the only production worthy automatic test solution for consistently and reliably characterizing Gallium Nitride high power FET and HEMT devices. In order to overcome the barriers of reliability and repeatable performance characteristics, and the reluctance of designers to design their systems with GaN devices, GaN manufacturers can provide well characterized and FTI 1000 tested devices.
Power MOSFET Avalanche Inductive Switching Tests
- Unclamped Inductive Switching (UIS)
- Clamped Inductive Switching (CIS)
Focused Test Inc. offers accurate & reliable Power MOSFET Avalanche Testing in a production environment. Power MOSFETs inherently have extremely fast switching speeds. As a result, designers often use them in high speed switching circuits which take advantage of this capability. The ability to accurately characterize devices provides confidence in avalanche ruggedness.
MOSFET Safe Operating Area (SOA)
Using the SOA or HP module, the Safe Operating Area test applies a given power to the MOSFET device under test for a given pulse width. A passing device will absorb the programmed power for the pulse duration, followed by a final VDS measurement. Should a device breakdown, or otherwise fail during the Pulse, an over current detection will halt the test immediately and report the failure.
MOSFET Thermal Tests
- Delta Vsd
- Delta Vgs
- Thermal Impedance
- Thermal Resistance
DVSD is the difference of two VSD (body diode voltage drop) measurements done before and after heating up the device for a certain period (heating time).