Interview with Peter Hancock, president of Focused Test. ... Read More ...
We will demonstrate our FTI 1000 test system configured for Wide Band Gap and other power discrete applications, including GaN HEMT Dynamic Rdson and SiC switching tests. FTI 1000's flexible and scalable architecture provides the very fast switching speeds and data capture rates needed for next generation GaN, SiC and silicon power discrete devices and power management ICs such as Gate Drivers and Regulators. ... Read More ...
Seica, Inc. has entered an exclusive sales, support, and distribution agreement with Focused Test, Inc. (FTI) of Boulder, Colorado. This partnership offers new and existing customers in North America the strengths of two diverse, uniquely positioned companies.
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FTI offers the only production worthy automatic test solution for consistently and reliably characterizing Gallium Nitride (GaN) high power FET and HEMT devices. Why do GaN semiconductor manufacturers need the FTI 1000 and production worthy “Dynamic On-Resistance: RDS(on)” proprietary test methodology? Introduction: The popularity of GaN semiconductor devices is increasing in today’s market due to the emergenceRead the Rest…
Focused Test Inc., when you need the very best in test equipment and service
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