Clamped Inductive Switching (CIS) Test Options for hard switching tests such as RBSOA and Eon/Eoff
Dynamic Rdson test station for Power GaN discrete devices
Offers <1μs measurement times neeeded to fully characterize the Current Collapse effect of power GaN devices.
Low Qg test option
Provides high accuracy measurements of Qgd for Mosfets with Qg< 1nC
Avalanche / UIS test options:
- Increases Id max from 100A to 200A for UIS tests
- Increases maximum Breakdown Voltage from 1,600V to 3,600V for SiC discrete devices for UIS tests
5kV DC test option:
Increases DC test voltages from 3.6kV to 5.0kV for SiC discrete devices