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Gallium Nitride High Power FET and HEMT Testing

Gallium Nitride High Power FET and HEMT Testing

FTI offers the only production worthy automatic test solution for consistently and reliably characterizing Gallium Nitride (GaN) high power FET and HEMT devices.   Why do GaN semiconductor manufacturers need the FTI 1000 and production worthy “Dynamic On-Resistance: RDS(on)” proprietary test methodology?     Introduction: The popularity of GaN semiconductor devices is increasing in today’s market due to the emergenceRead the Rest…


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